In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position
Özet: Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür. Anahtar kelimeler: Kane tipi yarıiletkenler, g-çarpanEffective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential BarrierAbstract: In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.Key words: Kane type semiconductors, g-factor