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In this work TiO2 and metal-doped TiO2 films were grown by Successive Ionic Layer Adsorption and Reaction Method (SILAR) with the same doping ratio and deposition parameters. The optical, electrical and structural properties of prepared films were investigated using various analytical techniques such as X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), energy dispersive X-ray analysis (EDX), UV–VIS spectroscopy, Raman spectroscopy, attenuated total reflectance (ATR) fourier transform infrared spectroscopy (FT-IR) and current-voltage characteristics. No peaks related to Cu, Sn, Zn, or their oxide phases were observed, indicating effective substitution into TiO2 lattice. Differences depending on doping were seen at the UV–VIS spectroscopy, Raman and ATR-FTIR analysis. This may be due to doping of metal ions, which can generate dopant energy levels within the bandgap of TiO2. The current flows between the fabricated interdigitated electrodes and the voltage were applied from − 5 to + 5 V, showing a variation with the doping element. The room temperature of NO2 gas sensor characteristics were studied for all samples. The 1 ppm NO2 gas responses were obtained as 3, 5, 9 and 7% for TiO2, Zn-doped TiO2, Cu-doped TiO2 and Sn-doped TiO2 sensors at room temperature, respectively. |
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