| dc.creator |
BABANLI, Arif |
|
| dc.creator |
TÜRKÖZ ALTUĞ, Deniz |
|
| dc.date |
2014-12-31T00:00:00Z |
|
| dc.date.accessioned |
2019-07-09T11:48:44Z |
|
| dc.date.available |
2019-07-09T11:48:44Z |
|
| dc.identifier |
http://dergipark.org.tr/sdufeffd/issue/11280/134805 |
|
| dc.identifier |
|
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/45786 |
|
| dc.description |
In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position |
|
| dc.description |
Özet: Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür. Anahtar kelimeler: Kane tipi yarıiletkenler, g-çarpanEffective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential BarrierAbstract: In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position.Key words: Kane type semiconductors, g-factor |
|
| dc.format |
application/pdf |
|
| dc.language |
tr |
|
| dc.publisher |
Süleyman Demirel University |
|
| dc.publisher |
Süleyman Demirel Üniversitesi |
|
| dc.relation |
http://dergipark.org.tr/download/article-file/116415 |
|
| dc.source |
Volume: 9, Issue: 2
132-136 |
en-US |
| dc.source |
1306-7575 |
|
| dc.subject |
Kane type semiconductors, g-factor |
|
| dc.subject |
Kane tipi yarıiletkenler, g-çarpan |
|
| dc.title |
Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı |
en-US |
| dc.title |
Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı |
en-US |
| dc.type |
info:eu-repo/semantics/article |
|