| dc.creator |
BABANLI, Arif |
|
| dc.creator |
TÜRKÖZ ALTUĞ, Deniz |
|
| dc.date |
2015-11-22T00:00:00Z |
|
| dc.date.accessioned |
2019-07-09T11:48:51Z |
|
| dc.date.available |
2019-07-09T11:48:51Z |
|
| dc.identifier |
http://dergipark.org.tr/sdufeffd/issue/11282/134832 |
|
| dc.identifier |
|
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/45837 |
|
| dc.description |
In this paper, effective g -factors of the electronsin Kane type GaAs semiconductor in the infinite potential wellin the presence electric field and magnetic field have been calculated. The magnetic field was applied parallel to interfaces in the z direction and electric field F was applied perpendicularly to the interfaces along the y direction. g-factor as a function of the oscillation center was constant for ground state andparabolic for first excited in uniform magnetic field was without electric field. When the electric field was present, Landefactor according to oscillation center decreased linearly for ground state and was non parabolic for first exited level in uniform magnetic field. We have found out that g-factor increase as the electric field increase |
|
| dc.description |
Abstract: In this paper, effective g -factors of the electronsin Kane type GaAs semiconductor in the infinite potential wellin the presence electric field and magnetic field have been calculated. The magnetic field was applied parallel to interfaces in the z direction and electric field F was applied perpendicularly to the interfaces along the y direction. g-factor as a function of the oscillation center was constant for ground state andparabolic for first excited in uniform magnetic field was without electric field. When the electric field was present, Lande-factor according to oscillation center decreased linearly for ground state and was non parabolic for first exited level in uniform magnetic field. We have found out that g-factor increase as the electric field increase.Key words: Well type potential, Kane type semiconductor, g-factorÇapraz Elektrik ve Magnetik Alan Altında Kane Tipi Kuantum Kuyusunun Elektronlarının g-ÇarpanıÖzet: Bu çalışmada, Kane tipi GaAs yarıiletken sonsuz kuyu potansiyelinde elektrik ve magnetik alanın olduğu durumda elektronların etkin g çarpanı hesaplandı. Magnetik alan kuyunun sınır yüzeyleri arasına z-ekseni boyunca, elektrik alan F, y-ekseni boyunca yüzeylere dik uygulandı. Sabit elektrik alan yokken elektronun etkin g-çarpanının değeri, osilasyon merkezinin bir fonksiyonu olarak, taban durumu için sabit, uyarılmış durum için ise parabolikti. Sabit magnetik alanda, elektrik alan uygulandığında Lande çarpanının osilasyon merkezine göre değişimi, taban durumu için düzgün azalırken ilk uyarılmış durum için parabolik değildi. Ayrıca g-çarpanın elektrik alanın artmasıyla arttığını bulduk.Anahtar kelimeler: Kuyu tipi potansiyel, Kane tipi yarıiletkenler, g-çarpan |
|
| dc.format |
application/pdf |
|
| dc.language |
en |
|
| dc.publisher |
Süleyman Demirel University |
|
| dc.publisher |
Süleyman Demirel Üniversitesi |
|
| dc.relation |
http://dergipark.org.tr/download/article-file/116440 |
|
| dc.source |
Volume: 10, Issue: 2
55-60 |
en-US |
| dc.source |
1306-7575 |
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| dc.subject |
Well type potential, Kane type semiconductor, g-factor |
|
| dc.subject |
Kuyu tipi potansiyel, Kane tipi yarıiletkenler, g-çarpan |
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| dc.title |
g-Factor of Electrons in Kane Type Quantum Wells Under Crossed Electric and Magnetic Fields |
en-US |
| dc.type |
info:eu-repo/semantics/article |
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