| dc.creator |
KARS DURUKAN, İlknur |
|
| dc.creator |
ÖZTÜRK, Mustafa Kemal |
|
| dc.creator |
ÖZÇELİK, Süleyman |
|
| dc.creator |
ÖZBAY, Ekmel |
|
| dc.date |
2017-02-03T00:00:00Z |
|
| dc.date.accessioned |
2019-07-09T11:59:19Z |
|
| dc.date.available |
2019-07-09T11:59:19Z |
|
| dc.identifier |
http://dergipark.org.tr/sdufenbed/issue/30898/334436 |
|
| dc.identifier |
10.19113/sdufbed.58096 |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/46218 |
|
| dc.description |
In this study, graded (A) InxGa1-xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1-xN (13.6 ≤ x ≤ 24.9) samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half-width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher. |
|
| dc.format |
application/pdf |
|
| dc.publisher |
Süleyman Demirel University |
|
| dc.publisher |
Süleyman Demirel Üniversitesi |
|
| dc.relation |
http://dergipark.org.tr/download/article-file/334681 |
|
| dc.source |
Volume: 21, Issue: 1
235-240 |
en-US |
| dc.source |
1308-6529 |
|
| dc.subject |
InGaN/GaN,Solar cell; MOCVD; HRXRD; UV; XRD |
|
| dc.title |
Analysis of the Mosaic Defects in Graded and Non Graded In<sub>x</sub>Ga<sub>1-x</sub>N Solar Cell Structures |
en-US |
| dc.type |
info:eu-repo/semantics/article |
|