| dc.creator |
KALELİ, Murat |
|
| dc.creator |
PARLAK, MEHMET |
|
| dc.creator |
Ercelebi, C. |
|
| dc.date |
2011-10-11T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T09:18:28Z |
|
| dc.date.available |
2020-10-06T09:18:28Z |
|
| dc.identifier |
0774c2f7-4800-4dd0-bc5d-fdfcfdd46230 |
|
| dc.identifier |
10.1088/0268-1242/26/10/105013 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/0774c2f7-4800-4dd0-bc5d-fdfcfdd46230/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/52540 |
|
| dc.description |
In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R-s) and shunt resistance (R-sh) values, the parasitic resistance (R-p = partial derivative V/partial derivative I) was analyzed for forward and reverse voltages. Devices showed very good diode behavior with the rectification factor of about 10(4) at 1.0 V in dark. The ideality factor n and the barrier height phi(b) values of the heterojunction diode were determined by performing different I-V plots. A space charge limited current method was used to determine the conduction mechanism at a high bias region. Spectral photo-response analyses showed a shifting of the band edge to the lower energies with increasing temperature. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode |
|
| dc.type |
info:eu-repo/semantics/article |
|