| dc.creator |
Babayev, Arif |
|
| dc.date |
2006-07-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T09:25:09Z |
|
| dc.date.available |
2020-10-06T09:25:09Z |
|
| dc.identifier |
10d50c3e-93d2-492a-a8af-390a120cb572 |
|
| dc.identifier |
10.1016/j.physe.2006.07.036 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/10d50c3e-93d2-492a-a8af-390a120cb572/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/53550 |
|
| dc.description |
The electronic states of a Kane type semiconductor quantum well with magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. Calculations are performed for a hard-wall confinement potential and the size dependence of the effective g-values in bare InSb type quantum well for electrons and light holes are found, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased with the increasing of quantum well thickness. (c) 2006 Elsevier B.V. All rights reserved. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Energy spectrum of carriers in Kane type quantum wells |
|
| dc.type |
info:eu-repo/semantics/article |
|