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Electron Lande g-factor in GaAs/Al(x)Gal(1-x)As quantum wires

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dc.creator Babayev, Arif
dc.creator TEZ, S.
dc.creator MERCAN, Oe.
dc.date 2008-12-31T22:00:00Z
dc.date.accessioned 2020-10-06T09:27:19Z
dc.date.available 2020-10-06T09:27:19Z
dc.identifier 1813c2e5-fa44-4bcc-81ea-5cd8b320da5b
dc.identifier 10.1016/j.physe.2008.06.030
dc.identifier https://avesis.sdu.edu.tr/publication/details/1813c2e5-fa44-4bcc-81ea-5cd8b320da5b/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/54254
dc.description Energy spectrum of charge carriers is researched with and without magnetic field in Kane-type semiconductor quantum nanostructures in case of finite potential barrier V. The model that is considered in the present study is composed of two concentric quantum wires. The inner part and outer part are made up of GaAs and AlxGa1-xAs, respectively. In the first part, it is shown that energy spectrum of carriers depends on quantum wire radius for finite potential barrier without magnetic field by using Kane model. In the second part, energy spectra of charge carriers are calculated as the function of magnetic field by using Kane model in AlxGa1-xAs/GaAs quantum wire and compared with results of parabolic approach. It is also shown that g-factors; of electrons rely on radius. it is seen that g-factor of electrons is increasing while radius is decreasing. The applied model is also useful for obtaining the energy spectra of light holes and spin-orbit splitting holes. Published by Elsevier B.V.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Electron Lande g-factor in GaAs/Al(x)Gal(1-x)As quantum wires
dc.type info:eu-repo/semantics/article


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