Schottky barrier height dependence on the metal work function for p-type Si Schottky diodes

dc.creator	CANKAYA, Güven
dc.creator	Ucar, Nazım
dc.date	2004-10-31T22:00:00Z
dc.date.accessioned	2020-10-06T09:47:37Z
dc.date.available	2020-10-06T09:47:37Z
dc.identifier	3a32d439-bb2f-429e-931c-97e86dd7fd37
dc.identifier	10.1515/zna-2004-1112
dc.identifier	https://avesis.sdu.edu.tr/publication/details/3a32d439-bb2f-429e-931c-97e86dd7fd37/oai
dc.identifier.uri	http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/57689
dc.description	We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Ph, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S = phi(b)/phi(m)) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5.10(13) I/eV per cm(2), and the average pinning position of the Fermi level as 0.661 eV below the conduction band.
dc.language	eng
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Schottky barrier height dependence on the metal work function for p-type Si Schottky diodes
dc.type	info:eu-repo/semantics/article

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