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THIOPHENE DEPOSITION ON PAPER SURFACE BY PULSED RF-PLASMA

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dc.creator Sahin, Halil Turgut
dc.date 2014-12-31T22:00:00Z
dc.date.accessioned 2020-10-06T09:48:39Z
dc.date.available 2020-10-06T09:48:39Z
dc.identifier 41d03f5e-9e02-4cfa-b1f7-c45db54429c6
dc.identifier 10.1080/02773813.2014.981279
dc.identifier https://avesis.sdu.edu.tr/publication/details/41d03f5e-9e02-4cfa-b1f7-c45db54429c6/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/58458
dc.description The plasma duty cycle, in addition to power and exposure time, affects the surface atomic composition of thiophene plasma-treated paper. The elemental carbon and sulfur concentration increased from 56.7% to 78.6% and 0% to 13.4%, respectively, while oxygen decreased from 43.3% to 8.0% with the plasma treatment. Relatively large variations in the deposited film-like layer composition could be realized by changing plasma external parameters. The high-resolution (HR) C1s spectra of the thiophene plasma-treated paper clearly exhibit plasma-induced rearrangements and new sulfur functionalities on the paper surface. After a five-hour ex situ doping of thiophene plasma-treated papers with iodine, conductivity ranging from delta = 4.2E-2 to 4.1 S/cm was obtained. The low relative F/C atomic ratio after TFAA derivatization indicates that no hydroxyl groups were present on the paper surface after the thiophene plasma treatment.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title THIOPHENE DEPOSITION ON PAPER SURFACE BY PULSED RF-PLASMA
dc.type info:eu-repo/semantics/article


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