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Energy spectrum of carriers in a Kane-type semiconductor anti-wire

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dc.creator Cakmak, Seyfettin
dc.date 2005-07-31T21:00:00Z
dc.date.accessioned 2020-10-06T09:49:00Z
dc.date.available 2020-10-06T09:49:00Z
dc.identifier 44459741-8d79-4fb7-9161-d9ba9bb66a67
dc.identifier 10.1515/zna-2005-8-906
dc.identifier https://avesis.sdu.edu.tr/publication/details/44459741-8d79-4fb7-9161-d9ba9bb66a67/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/58709
dc.description The electronic states of a Kane-type semiconductor anti-wire with and without a magnetic field are theoretically investigated. The eigenvalues and eigenstates of Kane's Hamiltonian are obtained. The calculations are performed for a hard-wall confinement potential, and electronic states are obtained as functions of the magnetic field applied along the cylinder axis. The size dependences of the effective g-value in InSb for electrons and light holes are calculated. The effective g-values of the electrons and light holes decreased with decreasing anti-wire radius.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Energy spectrum of carriers in a Kane-type semiconductor anti-wire
dc.type info:eu-repo/semantics/article


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