| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.creator |
KÖKCE, Ali |
|
| dc.creator |
Duman, Songul |
|
| dc.creator |
ÖZDEMİR, Ahmet Faruk |
|
| dc.creator |
ALDEMİR, Rukiye |
|
| dc.date |
2019-11-30T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T09:49:57Z |
|
| dc.date.available |
2020-10-06T09:49:57Z |
|
| dc.identifier |
4b86a16e-2870-474b-855e-e91c97b853a0 |
|
| dc.identifier |
10.1007/s12633-018-0054-3 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/4b86a16e-2870-474b-855e-e91c97b853a0/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/59436 |
|
| dc.description |
To observe the neutron transmutation and displacement damage effects, Au/n-Si/Ag Schottky barrier diodes were exposed to thermal neutron irradiation. Irradiation induced changes in Schottky barrier height, saturation current, and donor concentration were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diodes. The irradiation for 10 s caused a little change in the Schottky diode parameters which were obtained from I-V and C-V measurements. Observable changes in the parameters occurred after the second irradiation of 30 s duration. After the total dose, an increase in saturation current and barrier height inhomogeneties took into place and a decrease in carrier concentration was observed due to the carrier removal effect of thermal neutron-induced damages. Whereas the values of zero bias barrier height have little change after irradiations, the values of ideality factor increased after irradiations. The values of zero-bias barrier height for all diodes was also calculated from reverse bias current characteristics. After second dose, the values of zero-bias barrier height decreased for all diodes. The values of series resistance were determined by Cheung functions before and after irradiations. Before irradiations, the values were found between 2.10 k omega and 2.76 k omega. After second dose, the values of series resistance of all diodes decreased and were found between 1.59 k omega and 2.20 k omega. Furthermore, the proof of thermal neutron transmutation of elements in the devices was given via energy dispersive spectroscopy (EDS) mapping. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes |
|
| dc.type |
info:eu-repo/semantics/article |
|