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Application of data mining methods to efficient microwave active device modeling

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dc.creator Cengiz, Yavuz
dc.date 2013-08-31T21:00:00Z
dc.date.accessioned 2020-10-06T10:14:36Z
dc.date.available 2020-10-06T10:14:36Z
dc.identifier 57bff665-5150-4904-ba4d-d0f72bd5dba5
dc.identifier 10.1002/mmce.20687
dc.identifier https://avesis.sdu.edu.tr/publication/details/57bff665-5150-4904-ba4d-d0f72bd5dba5/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/60674
dc.description In this work, the signal and noise behaviors of a microwave transistor within its operation domain (voltage drain to source-V-DS, current of drain to sourceI(DS), frequencyf) are modeled by data mining techniques (DMT) without using any information on the microwave circuit theory. The device is modeled by a black box whose small signal (S) and noise parameters are evaluated through data mining techniques, based on the fitting of both of these parameters for multiple bias and configuration. It has been shown that DMT have a high potential of faithful and efficient device modeling. (c) 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Application of data mining methods to efficient microwave active device modeling
dc.type info:eu-repo/semantics/article


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