| dc.creator |
KALELİ, Murat |
|
| dc.creator |
PARLAK, MEHMET |
|
| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.date |
2017-08-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:14:58Z |
|
| dc.date.available |
2020-10-06T10:14:58Z |
|
| dc.identifier |
5a601608-04a0-4b5c-9863-8344a1b6aeb4 |
|
| dc.identifier |
10.1007/s00339-017-1205-x |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/5a601608-04a0-4b5c-9863-8344a1b6aeb4/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/60942 |
|
| dc.description |
Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag-AIS-Ag-AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 x 10(3). The ideality factor and saturation current were found to be 1.74 and 2.71 x 10(-7) A, respectively. The n-AgInSe2/p-Si heterojunction diode exhibited non-ideal reverse-bias capacitance-voltage (C-2-V) characteristic due to fully depletion of n-AgInSe2 side. The basic photovoltaic parameters of the diode such as open-circuit voltage (V-oc), short-circuit current (I-sc), and fill factor (FF) were obtained as 0.49 V, 4.03 mA, and 27.65%, respectively. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition |
|
| dc.type |
info:eu-repo/semantics/article |
|