| dc.creator |
Benouis, C. E. |
|
| dc.creator |
BENHALİLİBA, MOSTEFA |
|
| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.date |
2019-10-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:25:26Z |
|
| dc.date.available |
2020-10-06T10:25:26Z |
|
| dc.identifier |
653d688e-2539-4185-8cd6-43feac62030e |
|
| dc.identifier |
10.1016/j.physb.2019.07.043 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/653d688e-2539-4185-8cd6-43feac62030e/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/62031 |
|
| dc.description |
The paper describes the behavior of capacitance (C-V) and conductance (G/omega-V) versus voltage characteristics of Ag/SnO2/n-Si/Au metal-oxide-semiconductor (MOS) junction under dark and light condition. In addition, C-V of the junction is measured at room temperature for several frequencies. Ag/SnO2/n-Si/Au MOSjunction is fabricated with both spray pyrolysis at kept substrate temperature of 300 degrees C and thermal evaporation in high vacuum processes for the SnO2 layer and metallic contacts respectively. C-V curves present several peaks when SnO2/Si junction is illuminated with high light intensities. The peaks seem to Gaussian distribution within the reverse-forward bias voltage. Under dark room light and solar simulator conditions, the electrical measurements of junction are achieved presenting different behaviors. The carrier density, calculated from C-V measurements of metal oxide semiconductor junction as a function of light intensity, changes from 0.17 x 10(17) to 0.85 x 10(17) cm(-3) as a result of light intensity. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The presence of C/omega-V and G/omega-V peaks profile of Ag/SnO2/n-Si/Au MOS junction for capacitor applications |
|
| dc.type |
info:eu-repo/semantics/article |
|