| dc.creator |
Evcin, A. |
|
| dc.creator |
OKCU, H. |
|
| dc.creator |
KAYALI, R. |
|
| dc.creator |
KALELİ, Murat |
|
| dc.creator |
Bezir, Nalan |
|
| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.date |
2017-08-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:40:21Z |
|
| dc.date.available |
2020-10-06T10:40:21Z |
|
| dc.identifier |
80decd0a-62cd-4d16-8104-3c7456619900 |
|
| dc.identifier |
10.12693/aphyspola.132.638 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/80decd0a-62cd-4d16-8104-3c7456619900/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/64762 |
|
| dc.description |
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I - V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates |
|
| dc.type |
info:eu-repo/semantics/article |
|