| dc.creator |
TURUT, A |
|
| dc.creator |
BATI, B |
|
| dc.creator |
Kokce, Ali |
|
| dc.creator |
SAGLAM, M |
|
| dc.creator |
YALCIN, N |
|
| dc.date |
1995-12-31T22:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:47:38Z |
|
| dc.date.available |
2020-10-06T10:47:38Z |
|
| dc.identifier |
88ba0d91-a4ad-4d62-a419-f7256ee2ea06 |
|
| dc.identifier |
10.1088/0031-8949/53/1/023 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/88ba0d91-a4ad-4d62-a419-f7256ee2ea06/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/65567 |
|
| dc.description |
Schottky barrier height shifts depending on the interfacial layer as well as a change of the interface state charge with the forward bias while considering the presence of bulk (semiconductor) series resistance are discussed both theoretically and experimentally. It has been concluded that the barrier height shift or increase in Schottky diodes is mainly due to the potential change across the interfacial layer and the occupation of the interface states as a result of the applied forward voltage. One assumes that the barrier height is controlled by the density distribution of the interface states in equilibrium with the semiconductor and the applied voltage. In nonideal Schottky diodes, the values of the voltage drops across the interfacial layer, the depletion layer and the bulk resistance are given in terms of the bias dependent ideality factor, n, different from those in literature. These values are determined by a formula obtained for V-i and V-s by means of change of the interface charge with bias. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect |
|
| dc.type |
info:eu-repo/semantics/article |
|