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Energy spectrum of carriers in Kane-type hollow cylinder

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dc.creator GASHIMZADE, FM
dc.creator BABAYEV, AM
dc.creator CAKMAKTEPE, S
dc.creator Cakmak, Seyfettin
dc.date 2004-05-31T21:00:00Z
dc.date.accessioned 2020-10-06T10:48:17Z
dc.date.available 2020-10-06T10:48:17Z
dc.identifier 8de54d78-7b07-4326-8376-278467ad4883
dc.identifier 10.1016/j.physe.2004.03.017
dc.identifier https://avesis.sdu.edu.tr/publication/details/8de54d78-7b07-4326-8376-278467ad4883/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/66064
dc.description The energy spectra of carriers confined to a narrow gap semiconductor hollow cylinder with hard walls are calculated both without and with an applied constant axial magnetic field, taking into account the real band structure of InSb-type materials: narrow energy gap and strong spin-orbit interaction. We calculated the size and magnetic field dependence of effective g-value in bare InSb-type hollow cylinder for electrons. It has been seen that the effective g-value of the electrons decreases with increasing radius. The magnetic field dependence of g-factor has a minimum only for subbands with the negative in. (C) 2004 Elsevier B.V. All rights reserved.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Energy spectrum of carriers in Kane-type hollow cylinder
dc.type info:eu-repo/semantics/article


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