| dc.creator |
OZDEMIR, AF |
|
| dc.creator |
TURUT, A |
|
| dc.creator |
Kokce, Ali |
|
| dc.date |
2006-02-28T22:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:48:31Z |
|
| dc.date.available |
2020-10-06T10:48:31Z |
|
| dc.identifier |
900df444-79eb-493e-94c4-233ab34533b1 |
|
| dc.identifier |
10.1088/0268-1242/21/3/016 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/900df444-79eb-493e-94c4-233ab34533b1/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/66250 |
|
| dc.description |
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs contacts have been measured in the temperature range of 80-300 K. An abnormal decrease in the experimental BH Phi(b) and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been attributed to the barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the metal-semiconductor interface. The ternperature-dependent I-V characteristics of the Au/n-GaAs contact have shown a double Gaussian distribution giving mean barrier heights of 0.967 and 0.710 eV and standard deviations of 0.105 and 0.071 V, respectively. A modified In(I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) versus I/T plot for the two temperature regions then gives Phi(b0) and A* as 0.976 and 0.703 eV, and 13.376 and 8.110 A cm(-2) K respectively. Furthermore, a value of -0.674 meV K-1 for the temperature coefficient has been obtained, and the value of -0.674 meV K-1 for the Au/n-GaAs Schottky diode is in close agreement with those in the literature. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics |
|
| dc.type |
info:eu-repo/semantics/article |
|