| dc.creator |
Calik, ADNAN |
|
| dc.creator |
Cankaya, Guven |
|
| dc.creator |
ÖZDEMİR, Ahmet Faruk |
|
| dc.creator |
UÇAR, Nazım |
|
| dc.creator |
SAHIN, Osman |
|
| dc.date |
2008-02-29T22:00:00Z |
|
| dc.date.accessioned |
2020-10-06T10:51:06Z |
|
| dc.date.available |
2020-10-06T10:51:06Z |
|
| dc.identifier |
a3757441-5f7f-4a31-b6a5-02edefe7c7a1 |
|
| dc.identifier |
10.1515/zna-2008-3-414 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/a3757441-5f7f-4a31-b6a5-02edefe7c7a1/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/68167 |
|
| dc.description |
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (phi(b)) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of Ob with increasing indentation weight, while contacts showed a nonideal diode behaviour. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Effect of indentation on I-V characteristics of Au/n-GaAs Schottky barrier diodes |
|
| dc.type |
info:eu-repo/semantics/article |
|