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Transverse thermoelectric power in a semiconductor quantum well in the presence of the Rashba effect

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dc.creator BABANLI, Arif
dc.date 2017-07-31T21:00:00Z
dc.date.accessioned 2020-10-06T10:59:37Z
dc.date.available 2020-10-06T10:59:37Z
dc.identifier a80b3c1c-e837-45c9-b6fc-e05ca9a28c1a
dc.identifier 10.1016/j.cjph.2017.05.023
dc.identifier https://avesis.sdu.edu.tr/publication/details/a80b3c1c-e837-45c9-b6fc-e05ca9a28c1a/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/68624
dc.description We have studied the Rashba spin-orbit effect on a quasi-two dimensional semiconductor quantum well with a parabolic potential placed in a magnetic field parallel to the plane of the quantum well, taking into account the Zeeman coupling. The expression for the density of states and the transverse thermoelectric power of the electron gas in a quasi-two- dimensional quantum well with a parabolic potential have been obtained for the case of strong degeneracy statistics. We show that the transverse thermoelectric power depends on the strength of the spin-orbital coupling parameter, the frequency. 0, which is a characteristic parameter of the electron gas thickness, and the strength of the magnetic field. (C) 2017 The Physical Society of the Republic of China(Taiwan). Published by Elsevier B.V. All rights reserved.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Transverse thermoelectric power in a semiconductor quantum well in the presence of the Rashba effect
dc.type info:eu-repo/semantics/article


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