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RF-plasma vapor deposition of siloxane on paper. Part 2: Chemical evolution of paper surface

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dc.creator Sahin, Halil Turgut
dc.date 2013-01-14T22:00:00Z
dc.date.accessioned 2020-10-06T10:59:40Z
dc.date.available 2020-10-06T10:59:40Z
dc.identifier a8661d5d-a063-474d-a8f0-0de4092578b1
dc.identifier 10.1016/j.apsusc.2012.11.046
dc.identifier https://avesis.sdu.edu.tr/publication/details/a8661d5d-a063-474d-a8f0-0de4092578b1/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/68661
dc.description Survey and high-resolution (HR) XPS studies indicate that OMCTSO plasma treatment created a new silicon containing functional groups and changed the hydroxyl content on the surface of paper. Four intense survey XPS spectrum peaks were observed for the OMCTSO plasma treated paper. They were the Si-2p at 100 eV, Si-2s at 160 eV, C-1s at 285 eV, and O-1s at 525 eV for the plasma modified surface. It was realized that the macromolecular chain-breaking mechanisms and plasma-induced etching processes control the number and the availability of OH-functionalities during OMCTSO plasma exposure on paper. The reaction, initiated by these species, depends mainly on the nature of chemicals in the plasma as well as on the energy level of the plasma and the nature of the surface effects in the modification of the paper. The ATR-FTIR spectrum of paper treated with OMCTSO plasma has characteristic absorption bands attributed to the Si-O and Si-O Si formations on the surface. (C) 2012 Elsevier B.V. All rights reserved.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title RF-plasma vapor deposition of siloxane on paper. Part 2: Chemical evolution of paper surface
dc.type info:eu-repo/semantics/article


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