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Elastic Scattering in Kane Type Semiconductor Circular Dots

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dc.creator Artunc, E.
dc.creator Babanli, A. M.
dc.creator KASALAK, TURGUT FATİH
dc.date 2015-02-28T22:00:00Z
dc.date.accessioned 2020-10-06T11:01:26Z
dc.date.available 2020-10-06T11:01:26Z
dc.identifier b5d2d204-0482-4b86-8da3-ca5beefb4b49
dc.identifier 10.12693/aphyspola.127.811
dc.identifier https://avesis.sdu.edu.tr/publication/details/b5d2d204-0482-4b86-8da3-ca5beefb4b49/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/70003
dc.description In this paper we have investigated the scattering of electrons by a circular narrow penetrable delta-type potential barrier in A(3)B(5) type semiconductors by using three-band Kane model. By using the Kane equations with the continuous conditions of the wave functions and flux discontinuous at the interface of two circular dots, we have analytically calculated the total cross-section and the Boltzmann conductivity for the semiconductor quantum rings with delta potential barrier. It has been shown that the quasi-bound states appear as peaks in the cross-section.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Elastic Scattering in Kane Type Semiconductor Circular Dots
dc.type info:eu-repo/semantics/article


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