| dc.creator |
CANKAYA, Güven |
|
| dc.creator |
Ucar, Nazım |
|
| dc.creator |
TURUT, Abdülmecit |
|
| dc.date |
2000-09-30T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T11:26:04Z |
|
| dc.date.available |
2020-10-06T11:26:04Z |
|
| dc.identifier |
ddadaa8c-64e5-4fb6-925c-4b1b4655c991 |
|
| dc.identifier |
10.1080/002072100415611 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/ddadaa8c-64e5-4fb6-925c-4b1b4655c991/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/73915 |
|
| dc.description |
In Au/n-GaAs Schottky diodes, a remarkable decrease in the depletion layer capacitance was observed by application of hydrostatic pressure. The capacitance decrease induced by the hydrostatic pressure is attributed to the change of ionized additional donor-like defect centres. Since the capacitance decrease is due to hydrostatic pressure, we suggest an application as a pressure-sensitive capacitor. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure |
|
| dc.type |
info:eu-repo/semantics/article |
|