| dc.creator |
Aldemir, Durmuş Ali |
|
| dc.creator |
Kaleli, Murat |
|
| dc.creator |
Yavru, Alp Celal |
|
| dc.date |
2020-07-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T11:26:05Z |
|
| dc.date.available |
2020-10-06T11:26:05Z |
|
| dc.identifier |
ddcb32e8-05bf-4370-a32c-7e9015e5e5e1 |
|
| dc.identifier |
10.1016/j.sna.2020.112091 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/ddcb32e8-05bf-4370-a32c-7e9015e5e5e1/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/73922 |
|
| dc.description |
The electrical and photovoltaic properties of Yb/CIGS thin film Schottky photodiode were studied. A low saturation current density of 3.2 x 10(-9) A/cm(2) and a high zero-bias barrier height of 0.92 eV were obtained from current-voltage (I-V) measurements taken under dark and at room temperature. We observed that the I-Vcharacteristic of the device was affected by the illumination. The device showed a good photodiode property with I-light/I-dark approximate to 10(3) at the lowest illumination level of 25 mW/cm(2). The value of series resistance decreased with increasing the illumination level. The values of open-circuit voltage and short circuit current density were respectively determined as 0.30 V and 78.6 mu A/cm(2) under the illumination level of 104 mW/cm(2). The carrier concentration of the CIGS was found to be 1.59 x 10(15 )cm(-3). The barrier height value of 0.61 eV obtained from capacitance-voltage (C-V) measurement at 1 MHz is lower than that determined from the semilogarithmic I-V plot. (C) 2020 Elsevier B.V. All rights reserved. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Electrical and photoelectric properties of Yb/CIGS thin film Schottky photodiode |
|
| dc.type |
info:eu-repo/semantics/article |
|