| dc.creator |
GUCLU, C. S. |
|
| dc.creator |
Karabulut, A. |
|
| dc.creator |
KÖKCE, Ali |
|
| dc.creator |
Altindal, S. |
|
| dc.creator |
ÖZDEMİR, Ahmet Faruk |
|
| dc.date |
2018-12-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T11:26:06Z |
|
| dc.date.available |
2020-10-06T11:26:06Z |
|
| dc.identifier |
de0cab53-0629-4f9c-ac9e-77bb7ce18fcc |
|
| dc.identifier |
10.1016/j.mssp.2018.08.019 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/de0cab53-0629-4f9c-ac9e-77bb7ce18fcc/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/73950 |
|
| dc.description |
In this study, a metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs) were fabricated by growing a thin Al2O3 insulator layer between Au/Ti and n-GaAs using atomic layer deposition (ALD) method. The effect of temperature and voltage on interface states (N-ss) and series resistance (R-s) of the (Au/Ti)/Al2O3/n-GaAs (MIS) type Schottky barrier diodes (SBDs) was investigated using the capacitance/conductance-voltage (C/ (G/omega-V) data measured in wide range of temperature (200-380 K) and voltage (+/- 5 V). It was found that C and G/omega are strongly dependent on temperature and voltage. The value of C in the forward bias region reaches to maximum and then becomes negative. This negative capacitance (NC) behavior of this SBD is observed for each temperature level. Also, capacitance-current (C-I) and conductance-current (G/omega-I) plots were drawn to explain the NC behavior. The negative value of C in the accumulation region corresponds to the maximum value of G/omega. Such behavior of C can be explained by the loss of interface charges located at (Al2O3)/n-GaAs interface because of impact ionization process, the existence of surface states (N-ss), series resistance (R-s) and interfacial of (Al2O3) oxide layer.Therefore, the voltage dependent profiles of R-s and N-ss were obtained using Nicollian-Brews and Hill-Colleman methods for enough high forward biases as a function of temperature at various positive bias voltages. The changes in R-s and N-ss values were attributed to restructure and reordering of the carriers under temperature and voltage effects. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) |
|
| dc.type |
info:eu-repo/semantics/article |
|