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The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K

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dc.creator GÜÇLÜ, Çiğdem Şükriye
dc.creator ALDEMİR, DURMUŞ ALİ
dc.creator ÖZDEMİR, AHMET FARUK
dc.date 2019-10-27T21:00:00Z
dc.date.accessioned 2020-10-06T11:26:32Z
dc.date.available 2020-10-06T11:26:32Z
dc.identifier e0fa3e17-08d0-42ff-abf1-13c5ab3cba1b
dc.identifier https://avesis.sdu.edu.tr/publication/details/e0fa3e17-08d0-42ff-abf1-13c5ab3cba1b/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/74263
dc.description
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title The Reverse Bias Current- Voltage-Temperature (I-V-T) Characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky Barrier Diodes (SBDs) in Temperature Range of 80-380K
dc.type info:eu-repo/semantics/conferenceObject


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