| dc.creator |
ÖZDEMİR, Ahmet Faruk |
|
| dc.creator |
OZSOY, T. |
|
| dc.creator |
KANSIZ, Y. |
|
| dc.creator |
KÖKCE, Ali |
|
| dc.creator |
SANCAK, M. |
|
| dc.creator |
UÇAR, Nazım |
|
| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.date |
2012-09-30T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T11:38:25Z |
|
| dc.date.available |
2020-10-06T11:38:25Z |
|
| dc.identifier |
e9a33219-48ac-4bd3-a3c0-bea66bbfc3ac |
|
| dc.identifier |
10.1051/epjap/2012110483 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/e9a33219-48ac-4bd3-a3c0-bea66bbfc3ac/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/75113 |
|
| dc.description |
The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters |
|
| dc.type |
info:eu-repo/semantics/article |
|