| dc.creator |
Babayev, Arif |
|
| dc.creator |
Tez, S. |
|
| dc.creator |
HASHIMZADE, F. M. |
|
| dc.date |
2009-10-31T22:00:00Z |
|
| dc.date.accessioned |
2020-10-06T11:50:14Z |
|
| dc.date.available |
2020-10-06T11:50:14Z |
|
| dc.identifier |
eedb01b8-af71-4157-a5dc-58f1c4433ccb |
|
| dc.identifier |
10.1140/epjb/e2009-00326-9 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/eedb01b8-af71-4157-a5dc-58f1c4433ccb/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/75636 |
|
| dc.description |
In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Particle penetration in Kane type semiconductor quantum dots |
|
| dc.type |
info:eu-repo/semantics/article |
|