| dc.creator |
ARTUNC, E |
|
| dc.creator |
CAKMAK, Seyfettin |
|
| dc.creator |
BABAYEV, AM |
|
| dc.creator |
Kokce, Ali |
|
| dc.creator |
CAKMAKTEPE, S |
|
| dc.date |
2003-05-31T21:00:00Z |
|
| dc.date.accessioned |
2020-10-06T12:03:52Z |
|
| dc.date.available |
2020-10-06T12:03:52Z |
|
| dc.identifier |
ffe0bd0b-e6fd-4c7b-a449-a6ce95a92c62 |
|
| dc.identifier |
10.1016/s1386-9477(02)00697-5 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/ffe0bd0b-e6fd-4c7b-a449-a6ce95a92c62/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/77337 |
|
| dc.description |
The electronic states of a Kane-type cylindrical semiconductor quantum wire with and without magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. The eigenstates and eigenvalues of the Kane's Hamiltonian are obtained. Calculations are performed for a hard-wall confinement potential and electronic states are obtained as a function of the magnetic field applied along the cylinder axis. We calculated the size dependence of the effective g-values in bare GaAs, InSb and InAs nanocrystals for electrons, light holes and spin-orbital splitting holes, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased while that of the spin-orbit splitting holes is increased with the increasing of quantum wires radius. It is shown that the g-value for electrons in GaAs quantum wire changes sign as a function of quantum wire radius. (C) 2003 Elsevier Science B.V. All rights reserved. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
g-factor of carriers in Kane-type semiconductor wire |
|
| dc.type |
info:eu-repo/semantics/article |
|