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Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer

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dc.creator ALDEMİR, DURMUŞ ALİ
dc.creator ÖZDEMİR, AHMET FARUK
dc.creator KÖKCE, ALİ
dc.date 2014-01-12T22:00:00Z
dc.date.accessioned 2021-01-21T08:06:12Z
dc.date.available 2021-01-21T08:06:12Z
dc.identifier 54a5fa7c-b758-4393-ba5c-d0690924d13b
dc.identifier https://avesis.sdu.edu.tr/publication/details/54a5fa7c-b758-4393-ba5c-d0690924d13b/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/81828
dc.description
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Investigation of current-voltage-temperature characteristics in Al/p-SiSchottky diode with the polythiophene SiO2 nanocomposite interfacial layer
dc.type info:eu-repo/semantics/conferenceObject


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