| dc.creator |
KALELİ, Murat |
|
| dc.date |
2020-03-31T21:00:00Z |
|
| dc.date.accessioned |
2021-01-21T08:17:01Z |
|
| dc.date.available |
2021-01-21T08:17:01Z |
|
| dc.identifier |
6bf4d937-c2b9-4b7a-ab11-08bf1f0b7fb7 |
|
| dc.identifier |
10.1016/j.ijleo.2019.163781 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/6bf4d937-c2b9-4b7a-ab11-08bf1f0b7fb7/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/82883 |
|
| dc.description |
The Pure And Al-Doped Cd0.25Zn0.75S Thin Films Have Been Firstly Fabricated By Ultrasonic Spray Pyrolysis (Usp) Technique And Then These Samples Were Subjected To Sulfurization At 500 degrees C In Nitrogen Atmosphere. The Structural, Electro-Optical, Morphological Properties, And The Elemental Composition Of The As-Grown And Sulphurated Samples Have Been Determined By Applying X-Ray Diffraction (Xrd), Ultraviolet-Visible Spectroscopy (Uv-vis), Scanning Electron Microscopy (Sem), And Energy Dispersive Spectroscopy (Eds) Measurements, Respectively. Xrd Measurements Have Revealed That The Sulphurated Samples Have Hexagonal Lattice Structure While The As-Grown Samples Have Cubic Lattice Structure. Uv-vis Measurements Have Shown That The Lowest Band Gap Energy Of 2.68 Ev Was Observed For Sulphurated Al-Doped Samples As The Sulphurated Un-Doped Samples Had The Highest Band Gap Energy Of 3.96 Ev. Additionally, Cross-Sectional Sem Images Of The Samples Have Proved That Usp Is A Controllable Deposition Technique For The Fabrication Of The Pure And Al Doped CCd0.25Zn0.75S Thin Films With 10 Nm Thickness Resolution. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Effect of sulphurization and Al doping on Cd0.25Zn0.75S thin films deposited by ultrasonic spray pyrolysis technique |
|
| dc.type |
info:eu-repo/semantics/article |
|