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Optical and electrical characterization of thin film MSP heterojunction based on organic material Al/p-Si/P3HT/Ag

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dc.creator Kaleli, M.
dc.creator Bayram, A. B.
dc.creator Benouis, C. E.
dc.creator Benhaliliba, M.
dc.creator Meftah, S. E.
dc.creator Yavru, C. A.
dc.date 2020-09-01T00:00:00Z
dc.date.accessioned 2021-12-03T11:29:26Z
dc.date.available 2021-12-03T11:29:26Z
dc.identifier 5fb1c1d0-109c-4f88-a8b4-4389d8fea31d
dc.identifier 10.1016/j.physb.2020.412238
dc.identifier https://avesis.sdu.edu.tr/publication/details/5fb1c1d0-109c-4f88-a8b4-4389d8fea31d/oai
dc.identifier.uri http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/92161
dc.description Fabrication and characterization of metal/semiconductor/polymer/metal (MSP) heterojunction diode are reported. The Al/p-Si/P3HT/Ag MSP heterojunction have been manufactured by a homemade ultrasonic spray pyrolysis (USP) method, and the organic layer has a thickness of similar to 150 nm and silver as front contact is deposited by physical vapor deposition (PVD) technique. The organic layer is deposited on glass and has been subject of XRD diffraction, patterns which revealed a grain size of similar to 18 nm, UV-Vis measurement and scanning electron microscope (SEM) images characterization.
dc.language eng
dc.rights info:eu-repo/semantics/closedAccess
dc.title Optical and electrical characterization of thin film MSP heterojunction based on organic material Al/p-Si/P3HT/Ag
dc.type info:eu-repo/semantics/article


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