| dc.creator |
Ayyildiz, E. |
|
| dc.creator |
Kaya, M. |
|
| dc.creator |
Cetin, H. |
|
| dc.creator |
Boyarbay, B. |
|
| dc.creator |
Gok, A. |
|
| dc.date |
2007-10-10T00:00:00Z |
|
| dc.date.accessioned |
2021-12-03T11:31:29Z |
|
| dc.date.available |
2021-12-03T11:31:29Z |
|
| dc.identifier |
83ea1473-d149-4fe0-bf9e-2836e9ce7888 |
|
| dc.identifier |
10.1088/0953-8984/19/40/406205 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/83ea1473-d149-4fe0-bf9e-2836e9ce7888/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/93067 |
|
| dc.description |
Sn/ PANI/ p- Si/ Al heterojunctions were fabricated by electropolymerization of aniline on chemically cleaned p- Si substrates. Current - voltage characteristics of Sn/ PANI/ p- Si/ Al heterojunctions measured in the temperature range 140 280 K are presented and analyzed. Although these devices were clearly rectifying, their I - V characteristics were non- ideal, which can be judged from the nonlinearity in the semi- logarithmic plots. The high values of the ideality factor n depending on the sample temperature may be ascribed to a decrease of the exponentially increasing rate in current due to space- charge injection into the PANI thin film at higher forward bias voltages. Careful analysis of the forward bias I - V characteristics on a log - log scale indicates that the space-charge-limited current ( SCLC) conduction controlled by an exponential trap distribution above the valence band edge dominates the current transport in the PANI/ p- Si diodes at high voltages. Furthermore, the PANI was characterized by using Fourier transform infrared ( FTIR) and ultraviolet - visible ( UV - vis) spectra. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions |
|
| dc.type |
info:eu-repo/semantics/article |
|