| dc.creator |
Cetin, H. |
|
| dc.creator |
Boyarbay, B. |
|
| dc.creator |
Uygun, A. |
|
| dc.creator |
Ayyildiz, E. |
|
| dc.date |
2011-04-01T00:00:00Z |
|
| dc.date.accessioned |
2021-12-03T11:31:33Z |
|
| dc.date.available |
2021-12-03T11:31:33Z |
|
| dc.identifier |
853e7838-3b97-4a2d-a587-29c0d5638d6c |
|
| dc.identifier |
10.1007/s00339-011-6305-4 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/853e7838-3b97-4a2d-a587-29c0d5638d6c/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/93095 |
|
| dc.description |
Thin films of polyaniline (PANI) titanium dioxide (TiO2) nanocomposites prepared with and without surfactant (tetradecyltrimethylammonium bromide, TTAB) were formed by spin coating onto chemically cleaned p-type silicon substrates. The current-voltage characteristics of the Au/PANI TiO (2)/p-Si/Al and Au/PANI TiO (2) TTAB/p-Si/Al heterojunctions had rectifying behavior with the potential barrier formed between the polymeric thin films and p-Si semiconductor, and they were analyzed on the basis of the standard thermionic emission (TE) theory. Cheung functions combined with conventional forward I-V characteristics were used to obtain diode parameters such as barrier height, ideality factor and series resistance (R (s) ). The values of barrier height, ideality factor and R (s) were found as 0.496 +/- 0.003 eV, 2.313 +/- 0.067 and 23.633 +/- 7.554 Omega for the Au/PANI TiO (2)/p-Si/Al device; 0.494 +/- 0.003 eV, 2.167 +/- 0.018 and 12.929 +/- 2.217 Omega for the Au/PANI TiO (2) TTAB/p-Si/Al device. In addition, the energy distributions of the interface state density of the devices were determined from the forward I-V characteristics by taking into account the bias dependence of the ideality factor and barrier height. It was seen that the PANI TiO (2) TTAB/p-Si device had slightly higher interface state density values than those of the PANI TiO (2)/p-Si device. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Electrical characterization and fabrication of organic/inorganic semiconductor heterojunctions |
|
| dc.type |
info:eu-repo/semantics/article |
|