| dc.creator |
Babayev, A. M. |
|
| dc.date |
2006-08-01T00:00:00Z |
|
| dc.date.accessioned |
2021-12-03T11:46:28Z |
|
| dc.date.available |
2021-12-03T11:46:28Z |
|
| dc.identifier |
a476e38c-1f24-435d-9d01-94551e667e3c |
|
| dc.identifier |
10.1088/0031-8949/74/2/021 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/a476e38c-1f24-435d-9d01-94551e667e3c/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/93904 |
|
| dc.description |
The energy spectrum of electrons in narrow band gap semiconductor nanocrystals which have position dependent band gap in an external non-uniform electric field which compensate the position dependence of the band edge of the valence band potential is studied theoretically taking into account the non-parabolicity of electrons in dispersion laws. The exact solutions of the Kane equations with strong spin-orbital interaction are determined via the band-gap changes as a function of position. The band edge gap potential is taken as the ring-shaped non-spherical oscillator potential V (r) = (gamma r(2))/(2) + (a)/(r(2)) + (b)/(r(2)sin(2) theta). |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
The position dependent band gap in Kane-type quantum dots |
|
| dc.type |
info:eu-repo/semantics/article |
|