| dc.creator |
KALELİ, Murat |
|
| dc.creator |
Koç, Murat |
|
| dc.creator |
Yavru, Celal Alp |
|
| dc.creator |
Üncü, İsmail Serkan |
|
| dc.creator |
ALDEMİR, Durmuş Ali |
|
| dc.date |
2022-11-01T00:00:00Z |
|
| dc.date.accessioned |
2023-01-09T12:07:15Z |
|
| dc.date.available |
2023-01-09T12:07:15Z |
|
| dc.identifier |
b8650a73-55c4-4254-81b6-a311975092d4 |
|
| dc.identifier |
10.1016/j.sna.2022.113973 |
|
| dc.identifier |
https://avesis.sdu.edu.tr/publication/details/b8650a73-55c4-4254-81b6-a311975092d4/oai |
|
| dc.identifier.uri |
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/98291 |
|
| dc.description |
© 2022 Elsevier B.V.Glass/Mo/CIGS/Yb Schottky photodiodes were fabricated by the physical vapor deposition method. The structural and morphological characterization of the CIGS layer on Mo was carried out. The current-voltage (I-V) characteristics were investigated in the dark, under solar light, and infrared. The diodes' ideality factor and zero bias barrier height were calculated as 1.55 and 0.84 eV in the dark, respectively. When the time-dependent current plots are examined, it is seen that the rise and decay times are lower for solar light than infrared. As the intensity of solar light increases, the rise and decay times decrease. The responsivity value for 100 mW/cm2 solar light was found to be 8.5 mA/W and the detectivity value was 1.7 × 107 Jones. For infrared light, the same parameters were calculated as 3.4 mA/W and 7.1 × 106 Jones. Furthermore, capacitance-voltage and conductance-voltage characteristics were evaluated for different frequencies. |
|
| dc.language |
eng |
|
| dc.rights |
info:eu-repo/semantics/closedAccess |
|
| dc.title |
Solar and infrared light sensing comparison of Yb/CIGS photodiode |
|
| dc.type |
info:eu-repo/semantics/article |
|