The observation of effective luminescence (PL) from the porous silicon (PS) at the visible region at room temperature is one of the prevalent topics in recent years. This is why there are many application areas in optoelectronics integration with the existing silicon technology. However, non-uniformity of PL is an important problem and should be solved before using its future applications as light emitting diodes (LEDs). In this study, spatial distribution properties of photoluminescence of porous silicon were investigated by imaging spectroscopy (IS) on macro (95 mm2) and micro (10 µm2) scale. It has been showed that the spatial distribution of PL is not homogeneous. The PS luminescence homogeneity is also affected by the production parameters and the post-anodization environmental conditions. It was showed that luminescence intensity and luminescence homogeneity increased with atmospheric aging.