In this work, the signal and noise behaviors of a microwave transistor within its operation domain (voltage drain to source-V-DS, current of drain to sourceI(DS), frequencyf) are modeled by data mining techniques (DMT) without using any information on the microwave circuit theory. The device is modeled by a black box whose small signal (S) and noise parameters are evaluated through data mining techniques, based on the fitting of both of these parameters for multiple bias and configuration. It has been shown that DMT have a high potential of faithful and efficient device modeling. (c) 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.